FDN361BN - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDN361BN
Manufacturer	Fairchild Semiconductor
File Size	153.84 KB
Description	N-Channel MOSFET
Datasheet	FDN361BN Datasheet
Additional preview pages of the FDN361BN datasheet.

Product details

Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

x 1.4 A, 30 V. RDS(ON) = 110 m: @ VGS = 10 V RDS(ON) = 160 m: @ VGS = 4.5 V x Low gate charge x Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities x High performance trench technology for extremely low RDS(ON) D D S SuperSOT TM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.

📁 Similar Datasheet

FDN304PZ - P-Channel MOSFET (ON Semiconductor)
FDN327N - N-Channel MOSFET (ON Semiconductor)
FDN335N - N-Channel MOSFET (ON Semiconductor)
FDN336P - P-Channel MOSFET (ON Semiconductor)
FDN337N - N-Channel MOSFET (ON Semiconductor)
FDN338 - FET (DCY)
FDN338P - P-Channel MOSFET (ON Semiconductor)
FDN339AN - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDN361AN - N-Channel MOSFET
FDN360P - single P-Channel MOSFET
FDN302P - P-Channel MOSFET
FDN304P - P-Channel MOSFET
FDN306P - P-Channel MOSFET
FDN308P - P-Channel MOSFET

Published: May 3, 2007 |