FDN360P - single P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDN360P
Manufacturer	Fairchild Semiconductor
File Size	231.68 KB
Description	single P-Channel MOSFET
Datasheet	FDN360P Datasheet
Additional preview pages of the FDN360P datasheet.

Product details

Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

-2 A, -30 V. RDS(on) = 0.080 Ω @ VGS = -10 V RDS(on) = 0.125 Ω @ VGS = -4.5 V.
Low gate charge (5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.

📁 Similar Datasheet

FDN304PZ - P-Channel MOSFET (ON Semiconductor)
FDN327N - N-Channel MOSFET (ON Semiconductor)
FDN335N - N-Channel MOSFET (ON Semiconductor)
FDN336P - P-Channel MOSFET (ON Semiconductor)
FDN337N - N-Channel MOSFET (ON Semiconductor)
FDN338 - FET (DCY)
FDN338P - P-Channel MOSFET (ON Semiconductor)
FDN339AN - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDN361AN - N-Channel MOSFET
FDN361BN - N-Channel MOSFET
FDN302P - P-Channel MOSFET
FDN304P - P-Channel MOSFET
FDN306P - P-Channel MOSFET
FDN308P - P-Channel MOSFET

Published: Mar 30, 2005 |