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FDMS8670S - N-Channel MOSFET

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FDMS8670S Product details

Description

Max rDS(on) = 3.5m: at VGS = 10V, ID = 20A Max rDS(on) = 5.0m: at VGS = 4.5V, ID = 17A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design The FDMS8670S has been designed to minimize losses in power conversion application.Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching perfor

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