Datasheet4U Logo Datasheet4U.com

FDMS86263P - P-Channel MOSFET

Description

This P

POWERTRENCH technology.

state resistance and optimized for superior switching performance.

Features

  • Max rDS(on) = 53 mW at VGS =.
  • 10 V, ID =.
  • 4.4 A.
  • Max rDS(on) = 64 mW at VGS =.
  • 6 V, ID =.
  • 4 A.
  • Very Low Rds.
  • on in Mid.
  • Voltage P.
  • Channel Silicon Technology Optimized for Low Qg.
  • This Product is Optimised for Fast Switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS86263P MOSFET Fairchild Semiconductor
FDMS86200 N-Channel MOSFET Fairchild Semiconductor
FDMS86200DC MOSFET Fairchild Semiconductor
FDMS86201 N-Channel MOSFET Fairchild Semiconductor
FDMS86202 MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDMS86200 N-Channel MOSFET
FDMS86200DC N-Channel MOSFET
FDMS86255 N-Channel MOSFET
FDMS86101 N-Channel MOSFET
FDMS86101DC N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
MOSFET – P-Channel, POWERTRENCH) -150 V, -22 A, 53 mW FDMS86263P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features • Max rDS(on) = 53 mW at VGS = −10 V, ID = −4.4 A • Max rDS(on) = 64 mW at VGS = −6 V, ID = −4 A • Very Low Rds−on in Mid−Voltage P−Channel Silicon Technology Optimized for Low Qg • This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications • 100% Uil Tested • This Device is Pb−Free and is RoHS Compliant Applications • Active Clamp Switch • Load Switch DATA SHEET www.onsemi.
Published: |