FDMS8672AS Datasheet (Fairchild Semiconductor)

FDMS8672AS, N-Channel MOSFET

tm The FDMS8672AS has been designed to minimize losses in power conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

This device has the added benefit of an efficient monolith

FDMS8672AS Features

* Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 18A

* Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* SyncFET Schottky Body Diode

* MSL1 robust package design

* RoHS Compliant ® TM