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FDMS8670 - N-Channel Power Trench MOSFET

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FDMS8670 Product details

Description

Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that has been especially tailored to minimize on-resistance.This part exhibits industry leading switching FOM (RDS Qgd) to enhance DC-DC synchronous rectifier efficiency.Application DC - DC Conversion Top Bottom Pin

Features

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