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FDMS86152 - N-Channel MOSFET

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FDMS86152 Product details

Description

Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. MSL1 robust package design 100% UIL tested RoHS Compl

Features

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