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FDMS86102LZ - N-Channel MOSFET

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FDMS86102LZ Product details

Description

Shielded Gate MOSFET Technology Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A HBM ESD protection level > 6 KV typical (Note 4) 100% UIL Tested RoHS Compliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized for the on-state resistance and yet maintain supe

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