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FDMS86105 - N-Channel MOSFET

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FDMS86105 Product details

Description

Shielded Gate MOSFET Technology Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A Advanced package and silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized

Features

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