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FDMS86300DC - N-Channel MOSFET

Description

This N

POWERTRENCH® process that incorporates Shielded Gate technology.

Features

  • DUAL COOL® Top Side Cooling PQFN package.
  • Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A.
  • Max rDS(on) = 4.0 mW at VGS = 8 V, ID = 21 A.
  • High performance technology for extremely low rDS(on).
  • 100% UIL Tested.
  • RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET - POWERTRENCH) Single N-Channel, DUAL COOL) 80 V, 3.1 mW, 110 A FDMS86300DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • DUAL COOL® Top Side Cooling PQFN package • Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A • Max rDS(on) = 4.
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