Datasheet Details
| Part number | FDMC86139P |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 340.20 KB |
| Description | MOSFET |
| Datasheet |
 FDMC86139P Datasheet
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| Part number | FDMC86139P |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 340.20 KB |
| Description | MOSFET |
| Datasheet |
FDMC86139P Datasheet
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Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology.This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. This product is optimised for fast switching app
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