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FDMC86244-L701 - N-Channel MOSFET

Download the FDMC86244-L701 datasheet PDF. This datasheet also covers the FDMC86244 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Features

  • Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A.
  • Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A.
  • Low Profile.
  • 1 mm Max in Power 33.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDMC86244-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDMC86244 N-Channel Power Trench MOSFET Fairchild Semiconductor
FDMC86240 N-Channel MOSFET Fairchild Semiconductor
FDMC86248 N-Channel Power Trench MOSFET Fairchild Semiconductor
FDMC8622 N-Channel Power Trench MOSFET Fairchild Semiconductor
FDMC86259P MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDMC86244 N-Channel MOSFET
FDMC86248 N-Channel MOSFET
FDMC8622 N-Channel MOSFET
FDMC86259P P-Channel MOSFET
FDMC86260 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 9.4 A, 134 mW FDMC86244, FDMC86244-L701 General Description This N−Channel MOSFET is produced using ON Semiconductor‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 134 mW at VGS = 10 V, ID = 2.8 A • Max rDS(on) = 186 mW at VGS = 6 V, ID = 2.4 A • Low Profile − 1 mm Max in Power 33 • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • DC − DC Conversion www.onsemi.com 8 765 SSSG 1234 DDDD Top Bottom WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC86244 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.