FDMC86106LZ - N-Channel Power Trench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMC86106LZ
Manufacturer	Fairchild Semiconductor
File Size	350.07 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMC86106LZ Datasheet
Additional preview pages of the FDMC86106LZ datasheet.

Product details

Description

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. DC - DC Conversion Top Pin 1 S S S G Bottom 5 6 7 8 D D D D D 4 3 2 1 G S S S D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain t

Features

Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A.
Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A.
HBM ESD protection level > 3 KV typical (Note 4).
100% UIL Tested.
RoHS Compliant General.

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Published: Sep 9, 2013 |