FDMC86160 - N-Channel Power Trench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMC86160
Manufacturer	Fairchild Semiconductor
File Size	305.93 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMC86160 Datasheet
Additional preview pages of the FDMC86160 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. Bridge Topologies Synchronous Rectifier Pin 1 Pin 1 S S S S G S S D D D G D D D D D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unl

Features

Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A.
Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A.
High performance technology for extremely low rDS(on).
Termination is Lead-free and RoHS Compliant General.

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Published: Sep 9, 2013 |