FDMC6679AZ Datasheet - Fairchild Semiconductor

FDMC6679AZ, N-Channel MOSFET

FDMC6679AZ P-Channel PowerTrench® MOSFET July 2009 FDMC6679AZ P-Channel PowerTrench® MOSFET -30 V, -20 A, 10 mΩ

Applications

* Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
* Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
* Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A
* HBM ESD protection level of 8 kV typical(note 3)

FDMC6679AZ_FairchildSemiconductor.pdf