FDMC610P Datasheet (Fairchild Semiconductor)

FDMC610P, MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on), fast switching speed and body dio

FDMC610P Features

* Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A

* Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A

* State-of-the-art switching performance

* Lower output capacitance, gate resistance, and gate charge boost efficiency

* Shielded gate technology reduces swit