FDD850N10LD Datasheet (Fairchild Semiconductor) - N-Channel PowerTrench MOSFET + Diode

FDD850N10LD, N-Channel PowerTrench MOSFET + Diode

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.

FDD850N10LD Features

* RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A

* RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A

* Low Gate Charge (Typ. 22.2 nC)

* Low Crss (Typ. 42 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* RoHS Comp