FDD850N10L - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD850N10L
Manufacturer	Fairchild Semiconductor
File Size	695.94 KB
Description	MOSFET
Datasheet	FDD850N10L Datasheet
Additional preview pages of the FDD850N10L datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Consumer Appliances LED TV and Monitor Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D G S D D-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted.S Symbol VDSS VGSS ID IDM EAS dv/dt PD Para

Features

RDS(on) = 61 mΩ ( yp. ) @ VGS = 10 V, ID = 12 A.
RDS(on) = 64 mΩ (Typ. ) @ VGS = 5 V, ID = 12 A.
Low Gate Charge (Typ. 22.2 nC).
Low Crss (Typ. 42 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability.
RoHS Compliant.

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Published: Jan 11, 2017 |