FDD8426H - Dual P and N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDD8426H
Manufacturer	Fairchild Semiconductor
File Size	521.01 KB
Description	Dual P and N-Channel MOSFET
Datasheet	FDD8426H_FairchildSemiconductor.pdf

FDD8426H Product details

Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Inverter H-Bridge D1 D1/D2 D2 G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel G2 S2 P-Channel www.DataSheet4U.com MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage

Features

Q1: N-Channel.
Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A.
Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A Q2: P-Channel.
Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A.
Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A.
100% UIL Tested.
RoHS Compliant N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ General.

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Published: Oct 14, 2009 |