FDD3860 - MOSFET

Fairchild Semiconductor

FDD3860 Datasheet Preview — Preview of FDD3860 PDF

Datasheet Details

Part number	FDD3860
Manufacturer	Fairchild Semiconductor
File Size	388.40 KB
Description	MOSFET
Datasheet	FDD3860-FairchildSemiconductor.pdf

FDD3860 Product details

Description

This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. DC-AC Conversion Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted.Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source V

Features

Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A.
High Performance Trench Technology for Extremely Low rDS(on).
100% UIL Tested.
RoHS Compliant September 2016 General.

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Published: Jan 11, 2017 |