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FDD3680 - N-Channel MOSFET

Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

  • 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V RDS(ON) = 51 mW @ VGS = 6 V.
  • Low Gate Charge (38 nC Typical).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.

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Datasheet Details

Part number FDD3680
Manufacturer onsemi
File Size 340.54 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD3680 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, POWERTRENCH) DATA SHEET www.onsemi.com VDSS 100 V RDS(ON) MAX 46 mW @ 10 V ID MAX 25 A 100 V FDD3680 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 25 A, 100 V.
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