Datasheet Details
| Part number | FDD3510H |
|---|---|
| Manufacturer | ON Semiconductor |
| File Size | 513.64 KB |
| Description | Dual N & P-Channel Power MOSFET |
| Datasheet |
 FDD3510H Datasheet
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| Part number | FDD3510H |
|---|---|
| Manufacturer | ON Semiconductor |
| File Size | 513.64 KB |
| Description | Dual N & P-Channel Power MOSFET |
| Datasheet |
FDD3510H Datasheet
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These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance. Inverter H-Bridge D1/D2 D1 D2 G2 S2 G1 S1 Dual DPAK 4L G1 G2 S1 N-Channel S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD Parameter Drain to Source Voltage Gate to Source
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