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FDD3672 N-Channel MOSFET

FDD3672 Description

FDD3672 FDD3672 March 2015 N-Channel UltraFET® Trench MOSFET 100V, 44A, 28mΩ .

FDD3672 Features

* rDS(ON) = 24mΩ (Typ. ), VGS = 10V, ID = 44A
* Qg(tot) = 24nC (Typ. ), VGS = 10V
* Low Miller Charge
* Low Qrr Body Diode
* Optimized efficiency at high frequencies

FDD3672 Applications

* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier Formerly developmental type 82760 GATE DRAIN (FLANGE) SOURCE TO-252AA D G S MOSFET Maximum Ratings TC = 2

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