FDD306P Datasheet (Fairchild Semiconductor)

FDD306P, MOSFET

This P-Channel 1.8V Speciﬁed MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management.

D G S TO-252 S G D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Volta

FDD306P Features

* 6.7 A,

* 12 V. RDS(ON) = 28 mΩ @ VGS =

* 4.5 V RDS(ON) = 41 mΩ @ VGS =

* 2.5 V RDS(ON) = 90 mΩ @ VGS =

* 1.8 V

* Fast switching speed

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability