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FDD306P MOSFET

FDD306P Description

FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET March 2015 FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET .
This P-Channel 1.

FDD306P Features

* 6.7 A,
* 12 V. RDS(ON) = 28 mΩ @ VGS =
* 4.5 V RDS(ON) = 41 mΩ @ VGS =
* 2.5 V RDS(ON) = 90 mΩ @ VGS =
* 1.8 V
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability

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MOSFET Fairchild Semiconductor
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