FDB016N04AL7 N-Channel MOSFET

Fairchild Semiconductor

Description

FDB016N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB016N04AL7 N-Channel PowerTrench® MOSFET 40 V, 306 A, 1.6 mW .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resista.

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Datasheet Specifications

Part number: FDB016N04AL7
Manufacturer: Fairchild Semiconductor
File Size: 968.67 KB
Datasheet: FDB016N04AL7-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 1.16 mW (Typ. ) @ VGS = 10 V, ID = 80 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

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FDB016N04AL7 N-Channel MOSFET Fairchild Semiconductor

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