FDB045AN08A0-F085
Features
- r DS(ON) = 3.9m: (Typ.), VGS = 10V, ID = 80A
- Qg(tot) = 92n C (Typ.), VGS = 10V
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
- Ro HS pliant
Formerly developmental type 82684
Applications
- 42V Automotive Load Control
- Starter / Alternator Systems
- Electronic Power Steering Systems
- Electronic Valve Train Systems
- DC-DC converters and Off-line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V systems
D GATE
SOURCE TO-263AB
DRAIN (FLANGE)
FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
Drain to Source Voltage Gate to Source Voltage
Drain Current
Continuous (TC < 137o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, with RTJA = 43o C/W)
EAS PD TJ, TSTG
Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature
Ratings 75 r20
90 19 Figure 4 600 310 2.0...
