FDB035N10A
Description
This N- Channel MOSFET is produced using onsemi’s advance
POWERTRENCH process that has been tailored to minimize the on- state resistance while maintaining superior switching performance.
Features
- RDS(on) = 3.0 m W ( Typ.) @ VGS = 10 V, ID = 75 A
- Fast Switching Speed
- Low Gate Charge, QG = 89 n C ( Typ.)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- Ro HS pliant
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
DATA SHEET .onsemi.
VDSS
RDS(ON) MAX
ID MAX
100 V
3.5 m W @ 10 V
214 A-
- Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A.
D2PAK- 3 (TO- 263, 3- LEAD) CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K FDB
035N10A
$Y
= Logo
&Z
= Assembly Plant Code
&3
= 3- Digit Date Code Format
&K
= 2- Digits Lot Run Traceability...
