FDB024N04AL7
Features
- RDS(on) = 2.0 mΩ (Typ.)@ VGS = 10 V, ID = 80 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- Ro HS pliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance Power Trench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
123 567
D2-PAK (TO-263)
1. Gate
2. Source 3. Source 4. Drain
5. Source
6. Source 7. Source
D (Pin4, tab)
G (Pin1)
S (Pin2,3,5,6,7)
MOSFET Maximum Ratings TC = 25o C unless otherwise noted.
Symbol
Parameter
VDSS VGSS
Drain to Source...
