FCB36N60N N-Channel MOSFET

Fairchild Semiconductor

Description

FCB36N60N N-Channel MOSFET March 2013 FCB36N60N N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ .
The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling proce.

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Datasheet Specifications

Part number: FCB36N60N
Manufacturer: Fairchild Semiconductor
File Size: 205.76 KB
Datasheet: FCB36N60N-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 81 mΩ (Typ. )@ VGS = 10 V, ID = 18 A
* Ultra low gate charge (Typ. Qg = 86 nC)
* Low effective output capacitance (Typ. Coss. eff = 361 pF)
* 100% avalanche tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Applications
* Solar Inverter
* AC-DC Power Supply D D G G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted
* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Param

FCB36N60N Distributors

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FCB36N60N N-Channel MOSFET Fairchild Semiconductor

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