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FCB20N60F-F085 N-Channel MOSFET

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Description

FCB20N60F-F085 N-Channel MOSFET FCB20N60F-F085 N-Channel MOSFET 600V, 20A, 190mΩ .
SuperFETTM is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low.

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Features

* Typ rDS(on) = 171mΩ at VGS = 10V, ID = 20A
* Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A
* UIS Capability
* RoHS Compliant

Applications

* Automotive On Board Charger
* Automotive DC/DC converter for HEV D GS MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Si

FCB20N60F-F085 Distributors

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📌 All Tags

FCB20N60F-F085 N-Channel MOSFET ON Semiconductor
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