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FCB20N60 N-Channel MOSFET

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Description

FCB20N60 * N-Channel SuperFET® MOSFET FCB20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ .
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance tech.

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Features

* 650 V @TJ = 150 °C
* Typ. RDS(on) = 150 m
* Ultra Low Gate Charge (Typ. Qg = 75 nC)
* Low Effective Output Capacitance (Typ. Coss. eff = 165 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D D G S D2-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Drain Current Drain Current - Continuous (TC

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