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FCB199N65S3 N-Channel MOSFET

FCB199N65S3 Description

Isc N-Channel MOSFET Transistor FCB199N65S3 *.

FCB199N65S3 Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCB199N65S3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 14 9 35 PD Total Dissipation @TC=25℃ 98 Tch Max. Operating Junc

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Datasheet Details

Part number
FCB199N65S3
Manufacturer
INCHANGE
File Size
254.35 KB
Datasheet
FCB199N65S3-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FCB199N65S3-like datasheet