BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

Datasheet Details

Part number	BSS123
Manufacturer	Fairchild Semiconductor
File Size	168.34 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	BSS123_FairchildSemiconductor.pdf

These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
Rugged and Reliable.
Compact industry standard SOT-23 surface mount package DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed (Note 1) PD Maximum Power Di.

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Published: Mar 23, 2005 |