BSS100 Datasheet (Fairchild Semiconductor) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS100, N-Channel Logic Level Enhancement Mode Field Effect Transistor

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.

This produc

BSS100 Features

* BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. _______________________________________________________________________________ D G BSS100