BSS110 Datasheet (Fairchild Semiconductor) - P-Channel Enhancement Mode Field Effect Transistor

BSS110, P-Channel Enhancement Mode Field Effect Transistor

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

They can be used, wi

BSS110 Features

* BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________