30H10K - N-Channel Trench Power MOSFET

FUMAN

30H10K Description

SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.30H10K(：S&CIC1689) N-Channel Trench Power MOSFET N-C hannel Trench Power MOSFET General Descripti.
The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V.

30H10K Features

* VDS = 30V,ID =100A RDS(ON) < 4.2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number: 30H10K
Manufacturer: FUMAN
File Size: 681.30 KB
Datasheet: 30H10K-FUMAN.pdf
Description: N-Channel Trench Power MOSFET

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N-Channel Trench Power MOSFET FUMAN

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