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BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE

BAW101V Description

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BAW101V Features

* Fast Switching Speed: Maximum of 50ns
* High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection
* Two Electrically Isolated Elements in a Single Compact Package
* Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when

BAW101V Applications

* shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchase

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Datasheet Details

Part number
BAW101V
Manufacturer
DIODES ↗
File Size
86.99 KB
Datasheet
BAW101V-Diodes.pdf
Description
HIGH VOLTAGE DUAL SWITCHING DIODE

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HIGH VOLTAGE DUAL SWITCHING DIODE Diodes
Diodes BAW101V-like datasheet