MTDA4N20J3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTDA4N20J3
Manufacturer	Cystech Electonics
File Size	266.15 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTDA4N20J3-CystechElectonics.pdf

Low Gate Charge.
Simple Drive Requirement.
RoHS compliant & Halogen-free package Equivalent Circuit MTDA4N20J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
1 Avalanche Current Avalanche Energy @ L=1mH, ID=11A, RG=25Ω Repetitive Avalanche Energy @ L=0.5mH.
2.

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Published: Oct 28, 2016 |