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MTDA0N10L3 - N-Channel Enhancement Mode Power MOSFET

Description

The MTDA0N10L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Single Drive Requirement.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Symbol MTDA0N10L3 Outline SOT-223 D G：Gate D：Drain S：Source S D G Ordering Information Device MTDA0N10L3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products P.

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Datasheet Details

Part number MTDA0N10L3
Manufacturer Cystech Electonics
File Size 309.93 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDA0N10L3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C870L3 Issued Date : 2014.04.08 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTDA0N10L3 BVDSS ID RDSON@VGS=10V, ID=3A RDSON@VGS=5V, ID=2A Description 100V 3.9A 77mΩ(typ) 87mΩ(typ) The MTDA0N10L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications.
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