MTDA0P10FP - P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTDA0P10FP
Manufacturer	Cystech Electonics
File Size	251.43 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTDA0P10FP-CystechElectonics.pdf

Low Gate Charge.
Simple Drive Requirement.
Pb-free lead plating package RDSON(MAX) 120mΩ Equivalent Circuit MTDA0P10FP Outline TO-220FP G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-15A, RG=25Ω Repetitive Avalanche Ener.

📁 MTDA0P10FP Similar Datasheet

Other Datasheets by Cystech Electonics

Published: Oct 28, 2016 |