BTB1412J3 - Low Vcesat PNP Epitaxial Planar Transistor

Cystech Electonics

Datasheet Details

Part number	BTB1412J3
Manufacturer	Cystech Electonics
File Size	212.77 KB
Description	Low Vcesat PNP Epitaxial Planar Transistor
Datasheet	BTB1412J3_CystechElectonics.pdf

Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A.
Excellent DC current gain characteristics.
Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :.
1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pu.

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Published: Jun 15, 2009 |