CY7C1473V25, CY7C1471V25 - (CY7C147xV25) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM

Cypress Semiconductor

CY7C1473V25 Datasheet Preview — This datasheet PDF includes multiple part numbers: CY7C1473V25, CY7C1471V25. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	CY7C1473V25, CY7C1471V25
Manufacturer	Cypress Semiconductor
File Size	428.71 KB
Description	(CY7C147xV25) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
Datasheet	CY7C1471V25_CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C1473V25, CY7C1471V25. Please refer to the document for exact specifications by model.

CY7C1473V25 Product details

Description

1] The CY7C1471V25, CY7C1473V25 and CY7C1475V25 are 2.5V, 2M x 36/4M x 18/1M x 72 Synchronous Flow-through Burst SRAMs designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states.The CY7C1471V25, CY7C1473V25 and CY7C1475V25 are equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle.This feature dramatically improves the throughput of

Features

No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles.
Can support up to 133-MHz bus operations with zero wait states.
Data is transferred on every clock.
Pin compatible and functionally equivalent to ZBT™ devices.
Internally self-timed output buffer control to eliminate the need to use OE.
Registered inputs for flow-through operation.
Byte Write capability.
2.5V/1.8V I/O power supply.

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Other Datasheets by Cypress Semiconductor

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Published: Nov 10, 2007 |