Datasheet Details
Part number:
CGH55030P1, CGH55030F1
Manufacturer:
Cree
File Size:
679.68 KB
Description:
Gan hemt.
Note:
This datasheet PDF includes multiple part numbers: CGH55030P1, CGH55030F1.
Please refer to the document for exact specifications by model.
CGH55030P1, CGH55030F1, GaN HEMT
RES, 1/16W, 0603, 1%, 562 OHMS RES, 1/16W, 0603, 1%, 22.6 OHMS CAP, 0.3pF, +/-0.05pF, 0402, ATC600L CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 0.4pF, +/-0.05pF, 0603
CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications.
The transistor is available in both screw-down, flange and solder-down, pill packages.
Based on appropriate external match adjustment, the CGH55030F1
CGH55030P1 Features
* 300 MHz Instantaneous Bandwidth
* 30 W Peak Power Capability
* 10 dB Small Signal Gain
* 4 W PAVE < 2.0 % EVM
* 25 % Efficiency at 4 W Average Power
* Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
* Designed for Multi-c
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