Datasheet Details
Part number:
CGH55015P1, CGH55015F1
Manufacturer:
Cree
File Size:
969.56 KB
Description:
Gan hemt.
Note:
This datasheet PDF includes multiple part numbers: CGH55015P1, CGH55015F1.
Please refer to the document for exact specifications by model.
CGH55015P1, CGH55015F1, GaN HEMT
CAP, 1.2pF, +/-0.1 pF, 0603, ATC 600S CAP, 0.3pF, +/-0.05 pF, 0402, ATC 600L CAP, 0.5pF,+/-0.05pF, 0603, ATC 600S CAP, 18pF, +/-5%, 0603, ATC 600S CAP, 39pF +/-5%, 0603, ATC 600S CAP, CER, 180pF, 50V, +/-5%, C0G, 0603 CAP, CER, 0.1UF, 50V, +/-10%, X7R, 0805 CAP, 10UF, 16V, SMT, TANTALUM CAP, 1.0UF ±
CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX and linear amplifier applications.
The transistor is available in both screw-down, flange and solder-down, pill packages.
Based on appropriate external match adjustment, the CGH55015F1/CG
CGH55015P1 Features
* 5.5 - 5.8 GHz Operation
* 15 W Peak Power Capability
* >10.5 dB Small Signal Gain
* 2 W PAVE < 2.0 % EVM
* 25 % Efficiency at 2 W Average Power
* Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
* Designed for Multi-carrie
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