CGH55030F1 Datasheet (Cree)

CGH55030F1, GaN HEMT

RES, 1/16W, 0603, 1%, 562 OHMS RES, 1/16W, 0603, 1%, 22.6 OHMS CAP, 0.3pF, +/-0.05pF, 0402, ATC600L CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 0.4pF, +/-0.05pF, 0603

CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications.

The transistor is available in both screw-down, flange and solder-down, pill packages.

Based on appropriate external match adjustment, the CGH55030F1

CGH55030F1 Features

* 300 MHz Instantaneous Bandwidth

* 30 W Peak Power Capability

* 10 dB Small Signal Gain

* 4 W PAVE < 2.0 % EVM

* 25 % Efficiency at 4 W Average Power

* Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications

* Designed for Multi-c