CGH40010 Datasheet (Cree) - RF Power GaN HEMT

CGH40010, RF Power GaN HEMT

RES,1/16W,0603,1%,0 OHMS RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.5pF, +/-0.05pF, 0603 CAP, 0.7pF, +/-0.1pF, 0603 CAP, 1.0pF, +/-0.1pF, 0603 CAP, 10.0

PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits.

www.DataSheet4U.com The transistor is available in both screw-down, flange

CGH40010 Features

* Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 14 dB Small Signal Gain at 4.0 GHz 13 W typical P3dB 65 % Efficiency at P3dB 28 V Operation APPLICATIONS

* 2-Way Private Radio Broadba