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C2M0040120D Silicon Carbide Power MOSFET

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Description

VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 55 A 40 mΩ N-Channel Enhancement Mode Fe.

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Datasheet Specifications

Part number
C2M0040120D
Manufacturer
Cree
File Size
965.71 KB
Datasheet
C2M0040120D-Cree.pdf
Description
Silicon Carbide Power MOSFET

Features

* Package
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
* Resistant to Latch-Up
* Halogen Free, RoHS Compliant Benefits
* Higher System Efficiency
* Reduced C

Applications

* Solar Inverters
* Switch Mode Power Supplies
* High Voltage DC/DC converters
* Battery Chargers
* Motor Drives
* Pulsed Power Applications Part Number C2M0040120D Package TO-247-3 Marking C2M0040120 Maximum Ratings (TC = 25 ˚C unless otherwise sp

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