Datasheet Details
- Part number
- CTLDM8120-M832D
- Manufacturer
- Central Semiconductor ↗
- File Size
- 764.41 KB
- Datasheet
- CTLDM8120-M832D-CentralSemiconductor.pdf
- Description
- SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CTLDM8120-M832D Description
CTLDM8120-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for hig.
CTLDM8120-M832D Features
* ESD protection up to 2kV
* Low rDS(ON) (0.24Ω MAX @ VGS=1.8V)
* High current (ID=0.95A)
* Logic level compatibility
MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, t
CTLDM8120-M832D Applications
* This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CFVS
TLM832DS CASE
APPLICATIONS:
* Switching Circuits
* DC-DC Converters
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