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CTLDM303N-M832DS - SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM303N-M832DS Description

CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver ap.

CTLDM303N-M832DS Features

* Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
* High current (ID=3.6A)
* Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junctio

CTLDM303N-M832DS Applications

* This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. TLM832DS CASE MARKING CODE: C330 APPLICATIONS:
* DC-DC converters
* Drive circuits

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SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor
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