CTLDM303N-M832DS Datasheet (Central Semiconductor) - SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM303N-M832DS, SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications.

This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.

TLM832DS CASE MARKING CODE: C3

CTLDM303N-M832DS Features

* Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)

* High current (ID=3.6A)

* Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junctio