Datasheet Details
- Part number
- NESG3032M14
- Manufacturer
- California Eastern Labs
- File Size
- 323.67 KB
- Datasheet
- NESG3032M14_CaliforniaEasternLabs.pdf
- Description
- NPN SILICON GERMANIUM RF TRANSISTOR
NESG3032M14 Description
NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PAC.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.
NESG3032M14 Features
* The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
* Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
* SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
* 4-pi
NESG3032M14 Applications
* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v
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