NESG3032M14 NPN SILICON GERMANIUM RF TRANSISTOR

California Eastern Labs

Description

NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PAC.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

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Datasheet Specifications

Part number: NESG3032M14
Manufacturer: California Eastern Labs
File Size: 323.67 KB
Datasheet: NESG3032M14_CaliforniaEasternLabs.pdf
Description: NPN SILICON GERMANIUM RF TRANSISTOR

Features

* The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
* Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
* SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
* 4-pi

Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

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